2N5631/D

更新时间： 2024-11-23 23:19:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管高压
页数	文件大小	规格书
8页	122K
描述
High-Voltage High-Power Transistors

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2N5631/D 数据手册

ON Semiconductort

NPN

2N5631

High-Voltage - High Power

Transistors

PNP

2N6031

. . . designed for use in high power audio amplifier applications and

high voltage switching regulator circuits.

• High Collector Emitter Sustaining Voltage –

16 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

= 140 Vdc

CEO(sus)

• High DC Current Gain – @ I = 8.0 Adc

= 15 (Min)

140 VOLTS

200 WATTS

• Low Collector–Emitter Saturation Voltage –

= 1.0 Vdc (Max) @ I = 10 Adc

CE(sat)

MAXIMUM RATINGS (1)

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

140

7.0

Unit

Vdc

Adc

CEO

Collector Current – Continuous

Peak

CASE 1–07

TO–204AA

(TO–3)

Base Current – Continuous

5.0

Adc

Total Device Dissipation @ T = 25_C

200

1.14

Watts

Derate above 25_C

W/_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200

stg

THERMAL CHARACTERISTICS (1)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

200

0.875

_C/W

150

100

100 120 140 160 180 200

T , TEMPERATURE (°C)

Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

May, 2001 – Rev. 0

2N5631/D

12 3 4 5 6 7 8

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与2N5631/D相关器件

型号	品牌	获取价格	描述	数据表
2N5631E3	MICROSEMI	获取价格	Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
2N5631G	ONSEMI	获取价格	16A, 140V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN
2N5632	CENTRAL	获取价格	SILICON POWER TRANSISTOR
2N5632	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
2N5632	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5632	ISC	获取价格	Silicon NPN Power Transistors
2N5632	JMNIC	获取价格	Silicon NPN Power Transistors
2N5632	NJSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N5632E3	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, NPN, Silicon, TO-63, Metal, 3 Pin, TO-6
2N5632LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2