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2N3866 PDF预览

2N3866

更新时间: 2024-11-24 12:23:43
品牌 Logo 应用领域
COMSET 晶体晶体管局域网
页数 文件大小 规格书
2页 98K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

2N3866 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknown风险等级:5.55
Is Samacsys:NBase Number Matches:1

2N3866 数据手册

 浏览型号2N3866的Datasheet PDF文件第2页 
NPN 2N3866  
SILICON PLANAR EPITAXIAL TRANSISTORS  
The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector  
connected to the case .  
They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
VCEO  
Collector-Emitter Voltage  
Collector-Emitter Voltage (VBE = 0)  
Emitter-Base Voltage  
Collector Current  
Total Power Dissipation  
Junction Temperature  
30  
55  
3.5  
0.5  
5
V
V
V
VCES  
VEBO  
IC  
PD  
TJ  
A
@ Tcase= 25°  
Watts  
°C  
200  
TStg  
Storage Temperature range  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Symbol Ratings  
Value  
Unit  
Thermal Resistance, Junction-case  
RthJ-c  
35  
°C/ W  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Test Condition(s)  
Symbol  
Ratings  
Min  
Typ Max Unit  
ICEO  
Collector Cutoff Current  
Collector Emitter Sustaining  
Voltage  
VCE=28 V, IB=0  
-
-
20  
µA  
VCEO (*)  
IC=5 mA, IB=0  
30  
-
-
V
VCES  
VEBO  
Collector Base Breakdown Voltage IC=100 µA, VBE=0  
Emitter Base Breakdown Voltage IE=100 µA, IC=0  
55  
3.5  
10  
5
-
-
-
-
-
V
V
-
200  
-
IC=50 mA, VCE=5 V  
hFE (*)  
DC Current Gain  
-
IC=360 mA, VCE=5 V  
Collector-Emitter saturation  
Voltage  
IC=100 mA  
IB=20 mA  
VCE(SAT) (*)  
-
-
1
V
COMSET SEMICONDUCTORS  
1/2  

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