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2N3866AUB PDF预览

2N3866AUB

更新时间: 2024-11-27 12:50:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
4页 142K
描述
NPN SILICON HIGH-FREQUENCY TRANSISTOR

2N3866AUB 数据手册

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
NPN SILICON  
HIGH-FREQUENCY TRANSISTOR  
Qualified per MIL-PRF-19500/398  
DEVICES  
LEVELS  
JAN  
2N3866  
2N3866UB  
2N3866A  
2N3866AUB  
JANTX  
JANTXV  
JANS  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
30  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
60  
Vdc  
305  
400  
Vdc  
mAdc  
Total Power Dissipation  
@ TA = +25°C  
2N3866, A  
2N3866UB / AUB  
1.0  
0.5  
PT  
W
Operating & Storage Junction Temperature Range  
Tj, Tstg  
RθJC  
-65 to +200  
60.0  
°C  
TO-39 (TO-205AD)  
2N3866, 2N3866A  
Thermal Resistance, Junction-to-Case  
°C/W  
NOTE:  
1. Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB /  
2N3866AUB) above TA > +25°C  
2. TA = room ambient as defined in the general requirements of MIL-PRF-19500  
3. PT = 2.9W at TC = +25°C, derate at 16.6mW/°C above TC > +25°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERTICS  
UB Package  
2N3866UB, 2N3866AUB  
Collector-Emitter Breakdown Voltage  
IC = 5.0mAdc  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICEO  
30  
60  
Vdc  
Vdc  
Collector-Base Breakdown Voltage  
IC = 100µAdc  
Emitter-Base Breakdown Voltage  
IE = 100µAdc  
3.5  
Vdc  
Collector-Emitter Cutoff Current  
20  
μAdc  
μAdc  
V
CE = 28Vdc  
Collector-Emitter Cutoff Current  
VCE = 55Vdc  
ICES1  
100  
T4-LDS-0175 Rev. 1 (101096)  
Page 1 of 4  

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