Datasheet > 2N3867S

2N3867S

更新时间： 2024-11-23 21:53:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	56K
描述
Silicon PNP Power Transistors

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数据手册
替代型号

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2N3867S 数据手册

TECHNICAL DATA

PNP SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 350

Devices

Qualified Level

JAN

JANTX

JANTXV

2N3867

2N3867S

2N3868

2N3868S

MAXIMUM RATINGS

2N3867 2N3868

Symbol

V_CEO

V_CBO

V_EBO

I_C

2N3867S

2N3868S

Ratings

Collector-Emitter Voltage

Unit

Vdc

Adc

Collector-Base Voltage

Emitter-Base Voltage

4.0

3.0

TO-5*

2N3867, 2N3868

Collector Current -- Continuous

Total Power Dissipation

@ T_A= 25⁰C⁽¹⁾

1.0

-55 to +200

⁰C

P_T

@ T_C= 25⁰C⁽²⁾

Operating & Storage Temperature Range

THERMAL CHARACTERISTICS

Characteristics

T_OP,T_STG

Symbol

Max.

Unit

⁰C/W

TO-39*

(TO-205AD)

2N3867S, 2N3868S

Thermal Resistance, Junction-to-Case

17.5

qJC

1) Derate linearly 5.71 mW/⁰C for T_A> +25⁰C

2) Derate linearly 57.1 mW/⁰C for T_C> +25⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

Symbol

Min.

Max.

Unit

Vdc

I_C= 100 mAdc

2N3867, S

2N3868, S

V_(BR)

CBO

Collector-Emitter Breakdown Voltage

I_C= 20 mAdc

2N3867, S

2N3868, S

V_(BR)

CEO

Emitter-Base Breakdown Voltage

I_E= 100 mAdc

Vdc

V_(BR)

EBO

4.0

Collector-Emitter Cutoff Current

V_EB= 2.0 Vdc, V_CE= 40 Vdc

V_EB= 2.0 Vdc, V_CE= 60 Vdc

Collector-Base Cutoff Current

V_CB= 40 Vdc

V_CB= 60 Vdc

Emitter-Base Cutoff Current

V_EB= 4 Vdc

mAdc

1.0

2N3867, S

2N3868, S

I_CEX

mAdc

100

2N3867, S

2N3868, S

I_CBO

I_EBO

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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2N3867S 替代型号

型号	品牌	替代类型	描述	数据表
JANTX2N3867S	MICROSEMI	类似代替	Silicon PNP Power Transistors
JANTX2N3867	MICROSEMI	类似代替	Silicon PNP Power Transistors
JAN2N3867	MICROSEMI	类似代替	Silicon PNP Power Transistors

与2N3867S相关器件

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2N3867SMD05	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed
2N3868	NJSEMI	获取价格	POWER TRANSISTORS PNP SILICON
2N3868	MICROSEMI	获取价格	Silicon PNP Power Transistors
2N3868	CENTRAL	获取价格	Small Signal Transistors
2N3868S	MICROSEMI	获取价格	Silicon PNP Power Transistors
2N3868S	NJSEMI	获取价格	Trans GP BJT PNP 60V 3A 3-Pin TO-39
2N3868SMD	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed
2N3868SMD05	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed
2N3868V	NJSEMI	获取价格	Trans GP BJT PNP 60V 3A 3-Pin TO-39
2N3870	POWEREX	获取价格	Silicon Controlled Rectifier, 11000mA I(T), 100V V(DRM),