Datasheet > 2N3868

2N3868

更新时间： 2024-11-23 21:53:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
3页	59K
描述
Silicon PNP Power Transistors

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2N3868 数据手册

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

2N3868

APPLICATIONS:

High-Speed Switching

Medium-Current Switching

High-Frequency Amplifiers

FEATURES:

Silicon PNP Power

Transistors

Collector-Emitter Sustaining Voltage: V_CEO(sus)= - 60 Vdc (Min)

DC Current Gain: h_FE= 30-150 @ I_C= 1.5 Adc

Low Collector-Emitter Saturation Voltage:

V_CE(sat)= - 0.75 Vdc @ I_C= 1.5 Adc

High Current-Gain - Bandwidth Product: f_T= 90 MHz (Typ)

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE DIFFUSED

PLANAR process. This technology produces high voltage devices

with excellent switching speeds, frequency response, gain linearity,

saturation voltages, high current gain, and safe operating areas.

They are intended for use in Commercial, Industrial, and Military

power switching, amplifier, and regulator applications.

Ultrasonically bonded leads and controlled die mount techniques are

utilized to further increase the SOA capability and inherent reliability

of these devices. The temperature range to 200°C permits reliable

operation in high ambients, and the hermetically sealed package

insures maximum reliability and long life.

TO-5

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

- 60

UNITS

Vdc

Collector-Emitter Voltage

CEO

Collector-Base Voltage

Emitter-Base Voltage

V *

Vdc

- 4.0

Peak Collector Current

Continuous Collector Current

Base Current

Adc

I *

3.0

I *

0.5

I *

Storage Temperature

Operating Junction Temperature

Total Device Dissipation

-65 to 200

6.0

°C

Watts

T *

P *

STG

T = 25°C

34.3

1.0

mW/°C

Derate above 25°C

Total Device Dissipation

Watts

P *

T = 25°C

5.71

mW/°C

Derate above 25°C

q JC

Thermal Resistance

Junction to Case

°C/W

175

Junction to Ambient

* Indicates JEDEC registered data.

MSC1060.PDF 05-19-99

12 3

中文翻译

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2N3868 替代型号

型号	品牌	替代类型	描述	数据表
JAN2N3868S	MICROSEMI	完全替代	Silicon PNP Power Transistors
JAN2N3868	MICROSEMI	完全替代	Silicon PNP Power Transistors
JANTXV2N3868S	MICROSEMI	完全替代	Silicon PNP Power Transistors

与2N3868相关器件

型号	品牌	获取价格	描述	数据表
2N3868S	MICROSEMI	获取价格	Silicon PNP Power Transistors
2N3868S	NJSEMI	获取价格	Trans GP BJT PNP 60V 3A 3-Pin TO-39
2N3868SMD	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed
2N3868SMD05	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed
2N3868V	NJSEMI	获取价格	Trans GP BJT PNP 60V 3A 3-Pin TO-39
2N3870	POWEREX	获取价格	Silicon Controlled Rectifier, 11000mA I(T), 100V V(DRM),
2N3870	MOTOROLA	获取价格	Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
2N3870	NJSEMI	获取价格	SILICON CONTROLLED RECTIFIERS
2N3871	MOTOROLA	获取价格	Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
2N3871	POWEREX	获取价格	Silicon Controlled Rectifier, 11000mA I(T), 200V V(DRM),

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