Datasheet > 2N3879

2N3879

更新时间： 2024-11-24 06:18:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	130K
描述
Silicon NPN Power Transistors

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中文翻译

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2N3879 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N3879

DESCRIPTION

·With TO-66 package

·Wide area of safe operation

·High sustaining voltage

APPLICATIONS

·For high-speed switching and linear-

amplifier applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

Collector-base voltage

Collector-emitter sustaining voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

V_CEO(SUS)

V_EBO

I_C

120

Open base

Open collector

I_CM

Collector current-Peak

Base current

I_B

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

200

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction to case

5.0

℃/W

12 3

中文翻译

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