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2N3866AUB_02 PDF预览

2N3866AUB_02

更新时间: 2024-11-24 03:56:11
品牌 Logo 应用领域
SEMICOA 晶体晶体管
页数 文件大小 规格书
2页 234K
描述
Silicon NPN Transistor

2N3866AUB_02 数据手册

 浏览型号2N3866AUB_02的Datasheet PDF文件第2页 
2N3866AUB  
Silicon NPN Transistor  
Data Sheet  
Description  
Applications  
General purpose high frequency  
VHF-UHF amplifier transistor  
NPN silicon transistor  
Semicoa Semiconductors offers:  
Screening and processing per MIL-PRF-19500 Appendix E  
JAN level (2N3866AUBJ)  
JANTX level (2N3866AUBJX)  
JANTXV level (2N3866AUBJV)  
JANS level (2N3866AUBJS)  
QCI to the applicable level  
100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV and JANS  
Features  
Radiation testing (total dose) upon request  
Hermetically sealed Cersot ceramic  
Also available in chip configuration  
Chip geometry 1008  
Reference document:  
MIL-PRF-19500/398  
Benefits  
Qualification Levels: JAN, JANTX,  
JANTXV and JANS  
Please contact Semicoa for special configurations  
www.SEMICOA.com or (714) 979-1900  
Radiation testing available  
Absolute Maximum Ratings  
TC = 25°C unless otherwise specified  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
VCEO  
VCBO  
Rating  
30  
Unit  
Volts  
Volts  
60  
Volts  
mA  
VEBO  
IC  
3.5  
Collector Current, Continuous  
400  
W
Power Dissipation, TA = 25°C  
0.5  
PT  
2.86  
mW/°C  
°C/W  
Derate linearly above 25°C  
Thermal Resistance  
325  
RθJA  
Operating Junction Temperature  
TJ  
°C  
-65 to +200  
Storage Temperature  
TSTG  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. F  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 2  
www.SEMICOA.com  

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