Datasheet > 2N3867_1

2N3867_1

更新时间： 2024-09-16 12:54:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
4页	121K
描述
PNP SILICON LOW POWER TRANSISTOR

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数据手册

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2N3867_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/350

DEVICES

LEVELS

JAN

JANTX

JANTXV

JANS

2N3867

2N3868

2N3867S

2N3868S

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Base Voltage

Symbol 2N3867 2N3868

Unit

Vdc

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Vdc

4.0

3.0

1.0

Vdc

mAdc

W/°C

°C

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

P_T

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

THERMAL CHARACTERISTICS

Parameters / Test Conditions

TO-5 *

2N3867, 2N3868

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Ambient

175

°C/mW

R_θJA

Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”

corresponding devices.

1/ Derate linearly 5.71mW/°C for T_A> +25°C

2/ Derate linearly 57.1mW/°C for T_C> +25°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Current

Symbol

Min.

Max.

Unit

V_(BR)CEO

Vdc

2N3867, S

2N3868, S

I_C= 10μAdc

TO-39 * (TP-205AD)

2N3867S, 2N3868S

Collector-Base Cutoff Current

V_CB= 40Vdc

2N3867, S

2N3868, S

I_CBO

I_EBO

100

µAdc

_CB= 60Vdc

Emitter-Base Cutoff Current

V_EB= 4.0Vdc

Collector-Emitter Cutoff Current

V_CE= 40Vdc

2N3867, S

2N3868, S

2N3867, S

2N3868, S

1.0

_CE= 60Vdc

I_CEX

µAdc

V_CE= 40Vdc, T_A= +150°C

V_CE= 60Vdc, T_A= +150°C

T4-LDS-0170 Rev. 1 (101121)

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