Datasheet > 2N3866A

2N3866A

更新时间： 2024-11-24 03:56:11

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波
页数	文件大小	规格书
5页	368K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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数据手册

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2N3866A 数据手册

2N3866 / 2N3866A

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

Features

Silicon NPN, To-39 packaged VHF/UHF Transistor

Specified 400 MHz, 28Vdc Characteristics

- Output Power = 1.0 Watt

- Minimum Gain = 10 dB

- Efficiency = 45%

800 MHz Current-Gain Bandwidth Product

1. Emitter

2. Base

3. Collector

TO-39

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and

output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CEO

V_CBO

V_EBO

I_C

Parameter

Value

Unit

Vdc

Collector-Emitter

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

3.5

400

Thermal Data

Total Device Dissipation

Derate above 25ºC

5.0

28.6

Watts

mW/ ºC

2N3866.PDF 10-28-02

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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