Datasheet > 2N3635

2N3635

更新时间： 2024-11-30 22:35:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体放大器晶体管开关
页数	文件大小	规格书
2页	61K
描述
PNP SILICON AMPLIFIER TRANSISTOR

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数据手册
替代型号

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2N3635 数据手册

TECHNICAL DATA

PNP SILICON AMPLIFIER TRANSISTOR

Qualified per MIL-PRF-19500/ 357

Devices

Qualified Level

JAN

2N3634

2N3635

2N3636

2N3637

JANTX

2N3634L

2N3635L

2N3636L

2N3637L

JANTXV

JANS

MAXIMUM RATINGS

Ratings

2N3634* 2N3636*

2N3635* 2N3637*

Symbol

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

140

175

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_C

TO-39* (TO-205AD)

2N3634, 2N3635

2N3636, 2N3637

140

175

5.0

1.0

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

@ T_C= +25⁰C⁽²⁾

1.0

5.0

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly 5.71 mW/⁰C for T_A> +25⁰C

TO-5*

2N3634, 2N3635

2N3636, 2N3637

2) Derate linearly 28.6 mW/⁰C for T_C> +25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I_C= 10 mAdc

140

175

Vdc

2N3634, 2N3635

2N3636, 2N3637

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 100 Vdc

V_CB= 140 Vdc

hAdc

mAdc

I_CBO

100

2N3634, 2N3635

Emitter-Base Cutoff Current

V_EB= 3.0 Vdc

V_EB= 5.0 Vdc

hAdc

mAdc

I_EBO

Collector-Emitter Cutoff Current

V_CE= 100 Vdc

I_CEO

mAdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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2N3635 替代型号

型号	品牌	替代类型	描述	数据表
JAN2N3635	RAYTHEON	功能相似	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,

与2N3635相关器件

型号	品牌	获取价格	描述	数据表
2N3635E3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD
2N3635L	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
2N3635L	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
2N3635LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, T
2N3635UB	MICROSEMI	获取价格	RADIATION HARDENED
2N3636	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO39
2N3636	BOCA	获取价格	GENERAL PURPOSE TRANSISTOR (PNP SILICON)
2N3636	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
2N3636	COMSET	获取价格	SILICON PLANAR RF TRANSISTORS
2N3636	ONSEMI	获取价格	175V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39