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2N3637 PDF预览

2N3637

更新时间: 2024-12-01 12:51:07
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3页 77K
描述
SILICON PLANAR RF TRANSISTORS

2N3637 数据手册

 浏览型号2N3637的Datasheet PDF文件第2页浏览型号2N3637的Datasheet PDF文件第3页 
PNP 2N3636 – 2N3637  
SILICON PLANAR RF TRANSISTORS  
The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case.  
They are intended for high voltage switching and Low Power Amplifier.  
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
Collector-Emitter Voltage (Ib = 0)  
-175  
V
VCBO  
VEBO  
IC  
Collector-Base Voltage (Ie = 0)  
Emitter-Base Voltage (Ic = 0)  
Collector Current  
-175  
V
V
A
-5  
-1  
Tamb = 25°C  
Tcase = 25°C  
1
5
PD  
Total Power Dissipation  
W
Junction Temperature  
TJ  
200  
°C  
°C  
°C  
TStg  
Tamb  
Storage Temperature Range  
Operating Ambient Temperature  
-65 to +200  
-65 to +150  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
ICBO  
Ratings  
Test Condition(s)  
Min Typ Max Unit  
Collector Cutoff  
Current  
VCB = -100 V, IE =0  
-
-
-
-
-
-
-
-100  
nA  
nA  
V
IEBO  
Emitter Cutoff Current VEB = -3 V, IC =0  
-50  
Collector Emitter  
Breakdown Voltage (*)  
VCEO  
VCBO  
VEBO  
IC = -10 mA, IB =0  
-175  
-175  
-5  
-
-
-
Collector Base  
IC = -100 µA, IE =0  
Breakdown Voltage  
V
Emitter Base  
IE = -10 mA, IC =0  
Breakdown Voltage  
V
21/09/2012  
COMSET SEMICONDUCTORS  
1/3  

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