Datasheet > 2N3637UBE3

2N3637UBE3

更新时间： 2024-12-02 08:50:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	169K
描述
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3

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数据手册

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2N3637UBE3 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/357

DEVICES

LEVELS

JAN

2N3634

2N3635

2N3636

2N3637

2N3634L

2N3634UB

2N3635L

2N3635UB

2N3636L

2N3636UB

2N3637L

2N3637UB

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

2N3634* 2N3636*

2N3635* 2N3637*

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Unit

Vdc

Adc

140

5.0

1.0

175

5.0

1.0

Collector-Base Voltage

Emitter-Base Voltage

TO-5*

Collector Current

2N3634L, 2N3635L

2N3636L, 2N3637L

Total Power Dissipation

@ T_A= +25°C

@ T_C= +25°C

1.0

5.0

1.5

P_T**

UB:

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

°C

* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding

devices.

** Consult 19500/357 for De-Rating curves.

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

TO-39* (TO-205AD)

2N3634, 2N3635

2N3636, 2N3637

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

Vdc

2N3634, 2N3635

2N3636, 2N3637

140

175

Collector-Base Cutoff Current

V_CB= 100Vdc

ηAdc

μAdc

100

I_CBO

_CB= 140Vdc

_CB= 175Vdc

2N3634, 2N3635

2N3636, 2N3637

3 PIN

2N3634UB, 2N3635UB

2N3636UB, 2N3637UB

Emitter-Base Cutoff Current

_EB= 3.0Vdc

V_EB= 5.0Vdc

ηAdc

μAdc

I_EBO

Collector-Emitter cutoff Current

I_CEO

μAdc

_CE= 100Vdc

T4-LDS-0156 Rev. 2 (101452)

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