5秒后页面跳转
2N3636 PDF预览

2N3636

更新时间: 2024-12-01 07:28:27
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
1页 15K
描述
Bipolar PNP Device in a Hermetically sealed TO39

2N3636 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.11
最大集电极电流 (IC):1 A集电极-发射极最大电压:175 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-205ADJESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N3636 数据手册

  
2N3636  
Dimensions in mm (inches).  
Bipolar PNP Device in a  
8.51 (0.34)  
9.40 (0.37)  
Hermetically sealed TO39  
Metal Package.  
7.75 (0.305)  
8.51 (0.335)  
6.10 (0.240)  
6.60 (0.260)  
Bipolar PNP Device.  
VCEO = 175V  
IC = 1A  
0.89  
(0.035)  
max.  
12.70  
(0.500)  
min.  
0.41 (0.016)  
0.53 (0.021)  
dia.  
5.08 (0.200)  
typ.  
2.54  
(0.100)  
All Semelab hermetically sealed products  
can be processed in accordance with the  
requirements of BS, CECC and JAN,  
2
1
3
0.74 (0.029)  
1.14 (0.045)  
JANTX, JANTXV and JANS specifications  
0.71 (0.028)  
0.86 (0.034)  
45°  
TO39 (TO205AD)  
PINOUTS  
1 – Emitter  
2 – Base  
3 – Collector  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
175  
1
Units  
VCEO*  
IC(CONT)  
hFE  
V
A
@ 10/50m (VCE / IC)  
50  
150  
-
ft  
Hz  
W
PD  
1
* Maximum Working Voltage  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Generated  
1-Aug-02  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  

与2N3636相关器件

型号 品牌 获取价格 描述 数据表
2N3636L MICROSEMI

获取价格

PNP SILICON AMPLIFIER TRANSISTOR
2N3636L ONSEMI

获取价格

TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
2N3636LE3 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO
2N3636UB MICROSEMI

获取价格

RADIATION HARDENED
2N3637 CENTRAL

获取价格

PNP SILICON TRANSISTOR
2N3637 SEME-LAB

获取价格

PNP SILICON TRANSISTOR
2N3637 BOCA

获取价格

GENERAL PURPOSE TRANSISTOR (PNP SILICON)
2N3637 MICROSEMI

获取价格

PNP SILICON AMPLIFIER TRANSISTOR
2N3637 COMSET

获取价格

SILICON PLANAR RF TRANSISTORS
2N3637 NJSEMI

获取价格

SI PNP POWER BJT