Datasheet > 2N3635E3

2N3635E3

更新时间： 2024-12-02 05:21:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	169K
描述
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN

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数据手册

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2N3635E3 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/357

DEVICES

LEVELS

JAN

2N3634

2N3635

2N3636

2N3637

2N3634L

2N3634UB

2N3635L

2N3635UB

2N3636L

2N3636UB

2N3637L

2N3637UB

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

2N3634* 2N3636*

2N3635* 2N3637*

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Unit

Vdc

Adc

140

5.0

1.0

175

5.0

1.0

Collector-Base Voltage

Emitter-Base Voltage

TO-5*

Collector Current

2N3634L, 2N3635L

2N3636L, 2N3637L

Total Power Dissipation

@ T_A= +25°C

@ T_C= +25°C

1.0

5.0

1.5

P_T**

UB:

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

°C

* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding

devices.

** Consult 19500/357 for De-Rating curves.

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

TO-39* (TO-205AD)

2N3634, 2N3635

2N3636, 2N3637

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

Vdc

2N3634, 2N3635

2N3636, 2N3637

140

175

Collector-Base Cutoff Current

V_CB= 100Vdc

ηAdc

μAdc

100

I_CBO

_CB= 140Vdc

_CB= 175Vdc

2N3634, 2N3635

2N3636, 2N3637

3 PIN

2N3634UB, 2N3635UB

2N3636UB, 2N3637UB

Emitter-Base Cutoff Current

_EB= 3.0Vdc

V_EB= 5.0Vdc

ηAdc

μAdc

I_EBO

Collector-Emitter cutoff Current

I_CEO

μAdc

_CE= 100Vdc

T4-LDS-0156 Rev. 2 (101452)

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与2N3635E3相关器件

型号	品牌	获取价格	描述	数据表
2N3635L	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
2N3635L	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
2N3635LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, T
2N3635UB	MICROSEMI	获取价格	RADIATION HARDENED
2N3636	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO39
2N3636	BOCA	获取价格	GENERAL PURPOSE TRANSISTOR (PNP SILICON)
2N3636	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
2N3636	COMSET	获取价格	SILICON PLANAR RF TRANSISTORS
2N3636	ONSEMI	获取价格	175V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3636L	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR