Datasheet > 2N3636

2N3636

更新时间： 2024-12-01 12:51:07

品牌	Logo	应用领域
COMSET		晶体晶体管局域网
页数	文件大小	规格书
3页	77K
描述
SILICON PLANAR RF TRANSISTORS

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中文翻译

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数据手册

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2N3636 数据手册

PNP 2N3636 – 2N3637

SILICON PLANAR RF TRANSISTORS

The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case.

They are intended for high voltage switching and Low Power Amplifier.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CEO

Ratings

Value

Unit

Collector-Emitter Voltage (I_b= 0)

-175

V_CBO

V_EBO

I_C

Collector-Base Voltage (I_e= 0)

Emitter-Base Voltage (I_c= 0)

Collector Current

-175

-5

-1

T_amb= 25°C

T_case= 25°C

P_D

Total Power Dissipation

Junction Temperature

T_J

200

°C

T_Stg

T_amb

Storage Temperature Range

Operating Ambient Temperature

-65 to +200

-65 to +150

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

I_CBO

Ratings

Test Condition(s)

Min Typ Max Unit

Collector Cutoff

Current

V_CB= -100 V, I_E=0

-100

I_EBO

Emitter Cutoff Current V_EB= -3 V, I_C=0

-50

Collector Emitter

Breakdown Voltage (*)

V_CEO

V_CBO

V_EBO

I_C= -10 mA, I_B=0

-175

-5

Collector Base

I_C= -100 µA, I_E=0

Breakdown Voltage

Emitter Base

I_E= -10 mA, I_C=0

Breakdown Voltage

21/09/2012

COMSET SEMICONDUCTORS

1/3

12 3

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与2N3636相关器件

型号	品牌	获取价格	描述	数据表
2N3636L	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
2N3636L	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
2N3636LE3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO
2N3636UB	MICROSEMI	获取价格	RADIATION HARDENED
2N3637	CENTRAL	获取价格	PNP SILICON TRANSISTOR
2N3637	SEME-LAB	获取价格	PNP SILICON TRANSISTOR
2N3637	BOCA	获取价格	GENERAL PURPOSE TRANSISTOR (PNP SILICON)
2N3637	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR
2N3637	COMSET	获取价格	SILICON PLANAR RF TRANSISTORS
2N3637	NJSEMI	获取价格	SI PNP POWER BJT