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YJP200G06A PDF预览

YJP200G06A

更新时间: 2024-11-19 17:00:51
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
7页 843K
描述
TO-220

YJP200G06A 数据手册

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RoHS  
COMPLIANT  
YJP200G06A  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
60V  
ID  
200A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
100% EAS Tested  
100% VDS Tested  
2.9 mohm  
3.6 mohm  
General Description  
Split Gate Trench MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
● Consumer electronic power supply  
Isolated DC-DC Converters  
Motor control  
Invertors  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
60  
±20  
200  
V
V
TC=25℃  
Drain Current A  
ID  
A
TC=100℃  
125  
Pulsed Drain Current B  
Avalanche energy C  
IDM  
EAS  
600  
A
mJ  
W
500  
Total Power Dissipation D  
PD  
260  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Ambient E  
Junction and Storage Temperature Range  
RθJC  
RθJA  
0.48  
28  
/ W  
TJ ,TSTG  
-55+150  
Ordering Information (Example)  
PACKING  
PREFERED P/N  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
Marking  
DELIVERY MODE  
CODE  
YJP200G06A  
B1  
YJP200G06A  
50  
/
5000  
Tube  
1 / 7  
S-E050  
Rev.3.2,5-Jun-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com