RoHS
COMPLIANT
YJQ018N06A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
30A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<18mΩ
<22mΩ
General Description
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
J
Parameter
Symbol
Limit
60
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
7.6
V
TA=25℃
TA=100℃
TC=25℃
TC =100℃
Continuous Drain Current
(Note 1,2 )
Steady-State
Steady-State
4.8
ID
A
30
Continuous Drain Current
(Note 1,3 )
19
Pulsed Drain Current
Avalanche energy
IDM
110
54.76
2
A
TC=25℃, tp=100µs
A
EAS
mJ
VG=10V, RG=25Ω, L=0.5mH, IAS=14.8
TA=25℃
Steady-State
Total Power Dissipation
(Note 1,2)
0.8
TA=100℃
PD
W
59
TC=25℃
Steady-State
Total Power Dissipation
(Note 1,3 )
23
TC =100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
Typ
50
Max
Units
Thermal Resistance Junction-to-Ambient (Note 2)
Steady-State
Steady-State
RθJA
RθJC
60
℃/W
Thermal Resistance Junction-to-Case
1.7
2.1
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJQ018N06A
F1
Q018N06
5000
10000
100000
13“ reel
1 / 8
S-E524
Rev.1.0,26-Mar-24
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com