RoHS
COMPLIANT
YJQ15GP10AQ
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-100V
-15A
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
<110mΩ
<120mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Part no. with suffix ”Q” means AEC-Q101 qualified
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
● 12V, 24V and 48V Automotive systems
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
-100
±20
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
V
-3.9
-2.5
-15
TA=25℃
TA=100℃
TC=25℃
Drain Current
ID
A
-9.5
-35
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
A
EAS
64
mJ
2.5
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
Total Power Dissipation C
PD
W
43
17.2
-55~+150
Junction and Storage Temperature Range
TJ ,TSTG
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
2.4
2.9
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJQ15GP10AQ
F1
Q15GP10A
5000
10000
100000
13“ reel
1 / 7
S-D249
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.1,11-Jul-23