Datasheet > YJQ15GP10AQ

YJQ15GP10AQ

更新时间： 2024-04-09 19:01:30

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	353K
描述
DFN3333-8L

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YJQ15GP10AQ 数据手册

RoHS

COMPLIANT

YJQ15GP10AQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-100V

-15A

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

＜110mΩ

＜120mΩ

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● Power switching application

● Uninterruptible power supply

● DC-DC convertor

● 12V, 24V and 48V Automotive systems

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

-100

±20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-3.9

-2.5

-15

T_A=25℃

T_A=100℃

T_C=25℃

Drain Current

I_D

-9.5

-35

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

2.5

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Total Power Dissipation ^C

P_D

17.2

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

2.4

2.9

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJQ15GP10AQ

Q15GP10A

5000

10000

100000

13“ reel

1 / 7

S-D249

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,11-Jul-23

12 3 4 5 6 7

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