RoHS
COMPLIANT
YJQ13N03A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
30V
● ID
13A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<12 mohm
<15 mohm
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● High current load applications
● Load switching
DFN2x2-6L
● Hard switched and high frequency circuits
● Uninterruptible power supply
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
30
±20
13
V
V
TC=25℃
Drain Current
ID
A
TC=100℃
8.0
Pulsed Drain Current A
Total Power Dissipation
IDM
55
A
W
TC=25℃
2.9
PD
TC=100℃
1.2
W
Thermal Resistance Junction-to-Ambient B
Junction and Storage Temperature Range
RθJA
43
℃/ W
℃
TJ ,TSTG
-55~+150
Ordering Information (Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJQ13N03A
F1
Q13N03
3000
30000
120000
7” reel
1 / 8
S-E607
Rev.3.2,22-Feb-21
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com