RoHS
COMPLIANT
YJQ200P10AJ
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-100V
● ID
-8A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<200mΩ
<235mΩ
General Description
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
J
Parameter
Symbol
Limit
-100
±20
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
V
-2
TA=25℃
TA=100℃
TC=25℃
TC =100℃
Continuous Drain Current
(Note 1,2 )
Steady-State
Steady-State
-1.2
ID
A
-8
Continuous Drain Current
(Note 1,3 )
-5
Pulsed Drain Current
Avalanche energy
IDM
-25
A
TC=25℃, tp=100µs
A
EAS
27.56
1.78
0.71
29.7
11.9
-55~+150
mJ
VG=-10V, RG=25Ω, L=0.5mH, IAS=-10.5
TA=25℃
Steady-State
Total Power Dissipation
(Note 1,2)
TA=100℃
PD
W
TC=25℃
Steady-State
Total Power Dissipation
(Note 1,3 )
TC =100℃
Junction and Storage Temperature Range
TJ ,TSTG
℃
■Thermal resistance
Parameter
Symbol
Typ
56
Max
Units
Thermal Resistance Junction-to-Ambient (Note 2)
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
RθJA
RθJC
70
℃/W
3.5
4.2
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJQ200P10AJ
F1
Q200P10
5000
10000
100000
13“ reel
1 / 7
S-E520
Rev.1.0,25-Mar-24
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com