RoHS
COMPLIANT
YJQ03N10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
● ID
3A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
<240mΩ
<250mΩ
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Fast Switching Speed
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
100
V
V
±20
1
TA=25℃
0.6
TA=100℃
TC=25℃
Drain Current
ID
A
3
1.9
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
10
A
EAS
4
mJ
1.5
TA=25℃
TA=100℃
TC=25℃
TC =100℃
0.6
Total Power Dissipation C
PD
W
13.8
5.5
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
65
Max
80
9
Units
Thermal Resistance Junction-to-Ambient C
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
7.5
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJQ03N10A
F1
Q03N10A
5000
10000
100000
13“ reel
1 / 8
S-E304
Rev.1.0,07-Mar-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com