RoHS
COMPLIANT
YJQ016NP04A
N-Channel and P-Channel Complementary MOSFET
Product Summary
NMOS
● VDS
40V
● ID
24A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<16mΩ
<21mΩ
PMOS
● VDS
-40V
● ID
-18A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
<29mΩ
<41mΩ
General Description
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Wireless charger
● Load switching
● Power management
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
NMOS
PMOS
-40
Unit
V
Drain-source Voltage
VDS
40
±20
7
Gate-source Voltage
Drain Current
VGS
±20
V
-5
TA=25℃
4
-3
TA=100℃
TC=25℃
ID
A
24
-18
15
-11
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
96
-72
A
EAS
6.25
1.6
6.25
1.6
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
0.6
0.6
Total Power Dissipation C
PD
W
18.9
7.5
19.5
7.8
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
-55~+150
℃
■Thermal resistance
NMOS
PMOS
Parameter
Symbol
Units
Typ
Max
75
Typ
Max
75
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
RθJA
RθJC
60
60
℃/W
5.5
6.6
5.3
6.4
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJQ016NP04A
F1
Q016NP04A
5000
10000
100000
13’’ reel
1 / 10
S-E489
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,22-Jan-24