Datasheet > YJP200G06B

YJP200G06B

更新时间： 2024-03-03 10:09:58

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	792K
描述
TO-220

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数据手册

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YJP200G06B 数据手册

RoHS

COMPLIANT

YJP200G06B

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

200A

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜3.2 mohm

General Description

● Split Gate Trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Consumer electronic power supply

● Isolated DC-DC Converters

● Motor control

● Invertors

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

200

T_C=25℃

Drain Current ^A

I_D

T_C=100℃

125

Pulsed Drain Current ^B

Avalanche energy ^C

I_DM

EAS

600

500

Total Power Dissipation ^D

P_D

260

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Ambient ^E

Junction and Storage Temperature Range

R_θJC

R_θJA

0.48

℃/ W

T_J,T_STG

-55～+150

℃

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJP200G06B

1000

5000

Tube

1 / 7

S-E073

Rev.3.3,2-Jun-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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