Datasheet > YJP45G10B

YJP45G10B

更新时间： 2024-11-19 15:19:07

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	809K
描述
TO-220

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中文翻译

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数据手册

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YJP45G10B 数据手册

RoHS

COMPLIANT

YJP45G10B

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

45A

● I_D

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜17 mohm

General Description

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Fast switching and soft recovery

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

100

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_C=25℃

Drain Current

I_D

T_C=100℃

28.5

220

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

Tc=25℃

100

Total Power Dissipation ^C

P_D

Tc=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

℃/W

R_θJC

1.0

1.25

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJP45G10B

5000

Tube

1 / 6

S-E414

Rev.3.1,13-Jun-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

中文翻译

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