Datasheet > YJP11C65MJ

YJP11C65MJ

更新时间： 2024-11-21 18:09:39

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	709K
描述
TO-220

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YJP11C65MJ 数据手册

RoHS

COMPLIANT

YJP11C65MJ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

650V

11A

● I_D

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜360mΩ

General Description

● Super Junction High Voltage MOSFET technology

● Low R_DS(ON)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● High-frequency Switching

● Power factor correction

● Uninterruptible Power Supply

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

650

±30

1.6

T_A=25℃

T_A=100℃

T_C=25℃

Drain Current

I_D

6.9

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

135

3.5

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

1.4

Total Power Dissipation ^C

P_D

134

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

R_θJA

℃/W

R_θJC

0.75

0.93

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJP11C65MJ

5000

Tube

1 / 8

S-E503

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,7-Mar-24

12 3 4 5 6 7 8

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