Datasheet > YJP120G08A

YJP120G08A

更新时间： 2024-04-09 19:00:51

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	885K
描述
TO-220

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中文翻译

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数据手册

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YJP120G08A 数据手册

RoHS

COMPLIANT

YJP120G08A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

80V

● I_D

120A

● R_DS(ON)( at V_GS=10V)

● 100% UIS Tested

● 100% ▽VDS Tested

＜4.8mohm

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

Applications

● Battery protection

● Load switch

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

120

T_C=25℃

Drain Current

I_D

Tc=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

480

EAS

702

Tc=25℃

190

Total Power Dissipation ^C

P_D

Tc=100℃

75.8

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Limit

Units

℃/W

t≤10S

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

51.78

0.66

R_θJC

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJP120G08A

5000

Tube

1 / 7

S-E166

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,14-Sep-21

12 3 4 5 6 7

中文翻译

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