Datasheet > XP131A1330SR

XP131A1330SR

更新时间： 2024-09-18 22:11:19

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	278K
描述
XP131A1330SR

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中文翻译

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技术参数
数据手册

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XP131A1330SR 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82
湿度敏感等级：	1	Base Number Matches：	1

XP131A1330SR 数据手册

11S_04XP131A1330SR 02.9.12 3:48 PM ページ 699

Power MOS FET

NN-Channel Power MOS FET

NDMOS Structure

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NLow On-State Resistance : 0.03Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

■General Description

■Features

The XP131A1330SR is an N-Channel Power MOS FET with low on-

state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Low on-state resistance : Rds (on) = 0.03Ω ( Vgs = 4.5V )

: Rds (on) = 0.04Ω ( Vgs = 2.5V )

: Rds (on) = 0.07Ω ( Vgs = 1.5V )

Ultra high-speed switching

The small SOP-8 package makes high density mounting possible.

Operational Voltage

: 1.5V

High density mounting : SOP-8

■Pin Configuration

■Pin Assignment

PIN NUMBER

PIN NAME

FUNCTION

１�

２�

８�

Ｓ�

Ｇ�

Ｄ�

1 ～�3

Source

Gate

７�

３�

４�

６�

5 ～�8

Drain

５�

SOP-8�

（TOP VIEW）�

■Equivalent Circuit

■Absolute Maximum Ratings

Ta=25℃�

PARAMETER

SYMBOL

RATINGS

UNITS

１�

２�

８�

７�

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Vdss

Vgss

Ｖ�

Ａ�

Ｗ�

℃�

±8

３�

４�

６�

５�

Drain Current (Pulse)

Reverse Drain Current

Idp

N-Channel MOS FET�

( 1 device built-in )

Idr

Continuous Channel�

Power Dissipation (note)

2.5

Channel Temperature

Storage Temperature

Tch

Tstg

150

-55～150

( note ) : When implemented on a glass epoxy PCB

699

12 3 4

中文翻译

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