Datasheet > W27E520W-70

W27E520W-70

更新时间： 2024-09-18 22:08:31

品牌	Logo	应用领域
华邦 - WINBOND		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
16页	232K
描述
64K X 8 ELECTRICALLY ERASABLE EPROM

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中文翻译

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数据手册

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W27E520W-70 数据手册

W27E520

´ 8 ELECTRICALLY ERASABLE EPROM

64K

GENERAL DESCRIPTION

The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only

Memory organized as 65,536 8 bits. It includes latches for the lower 8 address lines to multiplex

with the 8 data lines. To cooperate with the MCU, this device could save the external TTL

component, also cost and space. It requires only one supply in the range of 4.5V to 5.5V in normal

read mode. The W27E520 provides an electrical chip erase function. It will be a great convenient

when you need to change/update the contents in the device.

FEATURES

· High speed access time: 70/90 nS (max.)

· Read operating current: 20 mA (max.)

· Erase/Programming operating current

· High Reliability CMOS Technology

2K V ESD Protection

200 mA Latchup Immunity

· Fully static operation

30 mA (max.)

· Standby current: 100 A (max.)

· All inputs and outputs directly TTL/CMOS

compatible

· Unregulated battery power supply range,

4.5V to 5.5V

· Three-state outputs

· +13V erase and programming voltage

· Available packages: 20-pin TSSOP and 20-pin

SOP

PIN CONFIGURATIONS

BLOCK DIAGRAM

ALE

OE / V

OUTPUT

BUFFER

A10

A12

A14

ALE

CONTROL

AD1

AD3

AD5

AD7

GND

TSSOP

Top View

AD7 - AD0

OE/VPP

A15

MEMORY

ARRAY

DECODER

AD6

AD4

AD2

AD0

A15 - A8

A13

A11

GND

VDD

ALE

A14

A12

A10

OE/VPP

A15

PIN DESCRIPTION

A13

SYMBOL

DESCRIPTION

A11

Address/Data Inputs/Outputs

Address Inputs

AD0 AD7

SOP

Top View

A8 A15

AD0

AD1

AD2

AD4

ALE

Address Latch Enable

Output Enable, Program/Erase

Supply Voltage

AD3

AD5

AD7

AD6

GND

Power Supply

GND

Ground

Publication Release Date: September 2000

Revision A2

- 1 -

12 3 4 5 6 7...16

中文翻译

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