W27L010S-12

更新时间： 2024-11-21 22:35:43

品牌	Logo	应用领域
华邦 - WINBOND		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
14页	122K
描述
128K ⅴ 8 ELECTRICALLY ERASABLE EPROM

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中文翻译

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数据手册

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W27L010S-12 数据手册

Preliminary W27L010

128K ´ 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION

The W27L010 is a high speed, low power consumption Electrically Erasable and Programmable Read

Only Memory organized as 131072 ´ 8 bits. It requires only one supply in the range of 3.0V to 3.6V in

normal read mode. The W27L010 provides an electrical chip erase function.

FEATURES

· High speed access time:

90/120 nS (max.)

· +14V erase/+12V programming voltage

· Fully static operation

· Read operating current: 10 mA (max.)

· All inputs and outputs directly TTL/CMOS

· Erase/Programming operating current:

compatible

30 mA (max.)

· Three-state outputs

· Standby current: 20 mA (max.)

· Available packages: 32-pin 600 mil DIP, 450

· Low voltage power supply range, 3.0V to 3.6V

mil SOP and PLCC

PIN CONFIGURATIONS

BLOCK DIAGRAM

PGM

OUTPUT

BUFFER

Vcc

Vpp

A16

A15

A12

CONTROL

DECODER

PGM

A14

A13

CORE

ARRAY

32-pin DIP

A11

A16

A10

GND

PIN DESCRIPTION

SYMBOL

DESCRIPTION

Address Inputs

Data Inputs/Outputs

A0- A16

Q0- Q7

A14

A13

Chip Enable

Output Enable

Program Enable

Program/Erase Supply Voltage

Power Supply

Ground

No Connection

32-pin PLCC

A11

A10

PGM

VPP

VCC

GND

Publication Release Date: February 1999

Revision A1

- 1 -

12 3 4 5 6 7...14

中文翻译

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