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W27LE520S-90 PDF预览

W27LE520S-90

更新时间: 2024-11-08 07:06:11
品牌 Logo 应用领域
华邦 - WINBOND 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
16页 104K
描述
64K X 8 ELECTRICALLY ERASABLE EPROM

W27LE520S-90 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.300 INCH, SOP-20
针数:20Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.92Is Samacsys:N
最长访问时间:90 ns其他特性:CAN ALSO OPERATE WITH 5V SUPPLY
命令用户界面:NO数据轮询:NO
JESD-30 代码:R-PDSO-G20JESD-609代码:e0
长度:12.8 mm内存密度:524288 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:20
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP20,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3/5 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:2.65 mm最大待机电流:0.00002 A
子类别:EEPROMs最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
宽度:7.5 mmBase Number Matches:1

W27LE520S-90 数据手册

 浏览型号W27LE520S-90的Datasheet PDF文件第2页浏览型号W27LE520S-90的Datasheet PDF文件第3页浏览型号W27LE520S-90的Datasheet PDF文件第4页浏览型号W27LE520S-90的Datasheet PDF文件第5页浏览型号W27LE520S-90的Datasheet PDF文件第6页浏览型号W27LE520S-90的Datasheet PDF文件第7页 
Advance Information W27LE520  
64K ´ 8 ELECTRICALLY ERASABLE EPROM  
GENERAL DESCRIPTION  
The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only  
Memory organized as 65,536 ´ 8 bits. It includes latches for the lower 8 address lines to multiplex  
with the 8 data lines. To cooperate with the MCU, this device could save the external TTL  
component, also cost and space. It requires only one supply in the range of 3.0V to 3.6V or 4.5V to  
5.5V in normal read mode. The W27LE520 provides an electrical chip erase function. It will be a  
great convenient when you need to change/update the contents in the device.  
FEATURES  
· High Reliability CMOS Technology  
- 2K V ESD Protection  
- 200 mA Latchup Immunity  
· High speed access time: 70/90 nS (max.)  
· Read operating current: 8 mA/20 mA (max.)  
· Erase/Programming operating current  
· Fully static operation  
· All inputs and outputs directly LVTTL/CMOS  
compatible  
· Three-state outputs  
· Available packages: 20-pin TSSOP and 20-pin  
SOP  
30 mA (max.)  
· Standby current: 20 mA /100 mA (max.)  
· Unregulated battery power supply range,  
3.0V to 3.6V or 4.5V to 5.5V  
· +13V erase and programming voltage  
PIN CONFIGURATIONS  
BLOCK DIAGRAM  
1
2
3
4
5
6
7
8
9
10  
A10  
A12  
A14  
ALE  
A8  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
ALE  
OE / V  
OUTPUT  
BUFFER  
CONTROL  
AD1  
AD3  
AD5  
AD7  
GND  
PP  
L
V
DD  
TSSOP  
Top View  
A
T
C
H
E
S
AD7 - AD0  
OE/VPP  
A15  
MEMORY  
ARRAY  
DECODER  
AD6  
AD4  
AD2  
AD0  
A13  
A15 - A8  
A11  
A9  
V
DD  
GND  
1
VDD  
ALE  
A14  
A12  
A10  
A8  
20  
19  
18  
17  
OE/VPP  
A15  
2
PIN DESCRIPTION  
3
A13  
A11  
A9  
4
SYMBOL  
DESCRIPTION  
5
SOP  
Top View  
16  
15  
14  
13  
12  
11  
Address/Data Inputs/Outputs  
Address Inputs  
AD0- AD7  
A8- A15  
ALE  
6
AD0  
7
AD1  
AD2  
AD4  
Address Latch Enable  
8
AD3  
AD5  
AD7  
Output Enable, Program/Erase  
Supply Voltage  
OE/VPP  
9
AD6  
10  
GND  
VDD  
Power Supply  
Ground  
GND  
Publication Release Date: 4/26/2000  
Revision A1  
- 1 -  

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