Datasheet > W27LE520

W27LE520

更新时间： 2024-11-22 03:09:15

品牌	Logo	应用领域
华邦 - WINBOND		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
16页	104K
描述
64K X 8 ELECTRICALLY ERASABLE EPROM

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中文翻译

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数据手册

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W27LE520 数据手册

Advance Information W27LE520

64K ´ 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION

The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only

Memory organized as 65,536 ´ 8 bits. It includes latches for the lower 8 address lines to multiplex

with the 8 data lines. To cooperate with the MCU, this device could save the external TTL

component, also cost and space. It requires only one supply in the range of 3.0V to 3.6V or 4.5V to

5.5V in normal read mode. The W27LE520 provides an electrical chip erase function. It will be a

great convenient when you need to change/update the contents in the device.

FEATURES

· High Reliability CMOS Technology

- 2K V ESD Protection

- 200 mA Latchup Immunity

· High speed access time: 70/90 nS (max.)

· Read operating current: 8 mA/20 mA (max.)

· Erase/Programming operating current

· Fully static operation

· All inputs and outputs directly LVTTL/CMOS

compatible

· Three-state outputs

· Available packages: 20-pin TSSOP and 20-pin

SOP

30 mA (max.)

· Standby current: 20 mA /100 mA (max.)

· Unregulated battery power supply range,

3.0V to 3.6V or 4.5V to 5.5V

· +13V erase and programming voltage

PIN CONFIGURATIONS

BLOCK DIAGRAM

A10

A12

A14

ALE

OE / V

OUTPUT

BUFFER

CONTROL

AD1

AD3

AD5

AD7

GND

TSSOP

Top View

AD7 - AD0

OE/VPP

A15

MEMORY

ARRAY

DECODER

AD6

AD4

AD2

AD0

A13

A15 - A8

A11

GND

VDD

ALE

A14

A12

A10

OE/VPP

A15

PIN DESCRIPTION

A13

A11

SYMBOL

DESCRIPTION

SOP

Top View

Address/Data Inputs/Outputs

Address Inputs

AD0- AD7

A8- A15

ALE

AD0

AD1

AD2

AD4

Address Latch Enable

AD3

AD5

AD7

Output Enable, Program/Erase

Supply Voltage

OE/VPP

AD6

GND

VDD

Power Supply

Ground

GND

Publication Release Date: 4/26/2000

Revision A1

- 1 -

12 3 4 5 6 7...16

中文翻译

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