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VS-HFA15TB60STRRP

更新时间： 2024-11-05 21:15:47
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
9页 210K
描述
DIODE 15 A, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3, Rectifier Diode

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VS-HFA15TB60STRRP 技术参数

生命周期：Lifetime Buy零件包装代码：D2PAK
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.67
其他特性：LOW NOISE应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
最大非重复峰值正向电流：150 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED最大反向恢复时间：0.06 µs
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-HFA15TB60STRRP 数据手册

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VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®,  
Ultrafast Soft Recovery Diode, 15 A  
FEATURES  
VS-HFA15 TB60SPbF  
VS-HFA15 TB60-1PbF  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Halogen-free according to IEC61249-2-21  
definition  
Base  
cathode  
2
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial level  
• AEC-Q101 qualified  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
1
N/C  
3
3
1
N/C  
Anode  
Anode  
D2PAK  
TO-262  
• Reduced parts count  
DESCRIPTION  
PRODUCT SUMMARY  
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of  
the art ultrafast recovery diode. Employing the latest in  
epitaxial construction and advanced processing techniques  
it features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
15 A  
600 V  
VR  
VF at IF  
1.7 V  
15  
A
continuous current, the VS-HFA15TB60SPbF,  
trr (typ.)  
TJ max.  
Diode variation  
23 ns  
VS-HFA15TB60-1PbF is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA15TB60SPbF,  
VS-HFA15TB60-1PbF is ideally suited for applications in  
power supplies and power conversion systems (such as  
inverters), motor drives, and many other similar applications  
where high speed, high efficiency is needed.  
150 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
15  
IFSM  
IFRM  
150  
A
Maximum repetitive forward current  
60  
TC = 25 °C  
74  
29  
Maximum power dissipation  
PD  
W
TC = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Revision: 10-Jun-11  
Document Number: 94054  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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