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VS-HFA16TB120SLHM3

更新时间： 2024-02-14 18:12:52
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
8页 173K
描述
Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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VS-HFA16TB120SLHM3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：D2PAK-3/2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：22 weeks风险等级：5.68
应用：EFFICIENCY配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：3.93 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2湿度敏感等级：1
最大非重复峰值正向电流：190 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：16 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED最大功率耗散：151 W
参考标准：AEC-Q101最大重复峰值反向电压：1200 V
最大反向电流：20 µA最大反向恢复时间：0.09 µs
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-HFA16TB120SLHM3 数据手册

 浏览型号VS-HFA16TB120SLHM3的Datasheet PDF文件第2页浏览型号VS-HFA16TB120SLHM3的Datasheet PDF文件第3页浏览型号VS-HFA16TB120SLHM3的Datasheet PDF文件第4页浏览型号VS-HFA16TB120SLHM3的Datasheet PDF文件第5页浏览型号VS-HFA16TB120SLHM3的Datasheet PDF文件第6页浏览型号VS-HFA16TB120SLHM3的Datasheet PDF文件第7页 
VS-HFA16TB120SHM3  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 16 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Specified at operating conditions  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
D2PAK  
2
• AEC-Q101 qualified  
• Meets JESD 201 class 1 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
BENEFITS  
• Reduced RFI and EMI  
1
N/C  
3
Anode  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
DESCRIPTION  
VS-HFA16TB120SHM3 is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 1200 V and 16 A continuous current,  
the VS-HFA16TB120SHM3 is especially well suited for use  
as the companion diode for IGBTs and MOSFETs. In  
addition to ultrafast recovery time, the HEXFRED® product  
line features extremely low values of peak recovery current  
(IRRM) and does not exhibit any tendency to “snap-off”  
during the tb portion of recovery. The HEXFRED features  
combine to offer designers a rectifier with lower noise and  
significantly lower switching losses in both the diode and the  
switching transistor. These HEXFRED advantages can help  
to significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA16TB120SHM3 is  
ideally suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
IF(AV)  
16 A  
1200 V  
3.0 V  
VR  
VF at IF  
trr (typ.)  
TJ max.  
Diode variation  
30 ns  
150 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
1200  
16  
UNITS  
Cathode to anode voltage  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
IFSM  
IFRM  
190  
A
Maximum repetitive forward current  
64  
TC = 25 °C  
151  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
60  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 28-Nov-14  
Document Number: 94991  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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