Datasheet > VS-HFA220FA120

VS-HFA220FA120

更新时间： 2023-12-06 20:07:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	148K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 200 A

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VS-HFA220FA120 数据手册

VS-HFA220FA120

Vishay Semiconductors

www.vishay.com

HEXFRED^®

Ultrafast Soft Recovery Diode, 220 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• Designed and qualified for industrial level

• UL approved file E78996

SOT-227

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

PRIMARY CHARACTERISTICS

The dual diode series configuration (VS-HFA220FA120) is

used for output rectification or freewheeling/clamping

operation and high voltage application. 

The semiconductor in the SOT-227 package is isolated from

the copper base plate, allowing for common heatsinks and

compact assemblies to be built. 

V_R

1200 V

2.68 V

V_F(typical)

t_rr(typical)

58 ns

_F(AV)per module at T_C

220 A at 38 °C

SOT-227

Package

These modules are intended for general applications such

as HV power supplies, electronic welders, motor control and

inverters.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

110

UNITS

Cathode to anode voltage

Continuous forward current

Single pulse forward current

V_R

I_F

T_C= 68 °C

T_J= 25 °C

T_C= 25 °C

T_C= 100 °C

I_FSM

700

500

Maximum power dissipation per leg

P_D

400

RMS isolation voltage

V_ISOL

Any terminal to case, t = 1 minute

2500

Operating junction and storage 

temperature range

T_J, T_Stg

-55 to +150

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode breakdown voltage

V_BR

I_R= 100 μA

1200

I_F= 100 A

2.68

3.41

2.62

3.59

3.60

4.70

2.89

3.89

I_F= 200 A

Forward voltage

V_FM

I_F= 100 A, T_J= 150 °C

I_F= 200 A, T_J= 150 °C

V_R= V_Rrated

μA

Reverse leakage current

I_RM

T_J= 125 °C, V_R= V_Rrated

T_J= 150 °C, V_R= V_Rrated

Revision: 10-Sep-2019

Document Number: 93636

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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