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VS-HFA240NJ40CPbF PDF预览

VS-HFA240NJ40CPbF

更新时间: 2024-09-27 14:55:51
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威世 - VISHAY /
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描述
HEXFRED? Ultrafast Soft Recovery Diode, 240 A

VS-HFA240NJ40CPbF 数据手册

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VS-HFA240NJ40CPbF  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 240 A  
FEATURES  
• Very low Qrr and trr  
Lug  
terminal  
anode 1  
Lug  
terminal  
anode 2  
• UL approved file E222165  
• Designed and qualified for industrial level  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
BENEFITS  
Base common  
cathode  
• Reduced RFI and EMI  
• Reduced snubbing  
TO-244  
DESCRIPTION / APPLICATIONS  
HEXFRED® diodes are optimized to reduce losses and  
EMI/RFI in high frequency power conditioning systems. An  
extensive characterization of the recovery behavior for  
different values of current, temperature and dIF/dt simplifies  
the calculations of losses in the operating conditions. The  
softness of the recovery eliminates the need for a snubber in  
most applications. These devices are ideally suited for  
power converters, motors drives and other applications  
where switching losses are significant portion of the total  
losses.  
PRIMARY CHARACTERISTICS  
IF(AV)  
240 A  
400 V  
VR  
I
F(DC) at TC  
Package  
197 A at 100 °C  
TO-244  
Circuit configuration  
Two diodes common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
400  
395  
197  
900  
1.4  
UNITS  
Cathode to anode voltage  
VR  
V
TC = 25 °C  
C = 100 °C  
Continuous forward current  
IF  
T
A
Single pulse forward current  
IFSM  
EAS  
Limited by junction temperature  
L = 100 μH, duty cycle limited by maximum TJ  
TC = 25 °C  
Non-repetitive avalanche energy  
mJ  
W
658  
263  
Maximum power dissipation  
PD  
TC = 100 °C  
Operating junction and storage  
temperature range  
TJ, TStg  
-55 to +150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
400  
TYP.  
MAX.  
UNITS  
Cathode to anode  
breakdown voltage  
VBR  
IR = 100 μA  
-
-
IF = 120 A  
IF = 240 A  
-
-
-
1.1  
1.3  
1.0  
1.47  
1.5  
V
Maximum forward voltage  
VFM  
See fig. 1  
IF = 120 A, TJ = 125 °C  
TJ = 125 °C, VR = 400 V  
VR = 200 V  
1.2  
Maximum reverse   
leakage current  
IRM  
See fig. 2  
See fig. 3  
-
660  
5000  
μA  
Junction capacitance  
Series inductance  
CT  
LS  
-
-
280  
6.0  
380  
-
pF  
nH  
From top of terminal hole to mounting plane  
Revision: 11-Jan-17  
Document Number: 94063  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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Ultrafast and ultrasoft recovery