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VS-HFA30PA60C-N3 PDF预览

VS-HFA30PA60C-N3

更新时间： 2024-10-30 12:02:47
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管功效PC局域网超快软恢复二极管
页数 文件大小 规格书
8页 195K
描述
HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A

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VS-HFA30PA60C-N3 技术参数

生命周期：Active包装说明：R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：1.87
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：826841Samacsys Pin Count：3
Samacsys Part Category：DisplaySamacsys Package Category：Transistor Outline, Vertical
Samacsys Footprint Name：TO-247AC - 50 mils L/FSamacsys Released Date：2019-08-11 04:16:43
Is Samacsys：N其他特性：LOW NOISE, PD-CASE
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：2 V
JEDEC-95代码：TO-247ACJESD-30 代码：R-PSFM-T3
最大非重复峰值正向电流：150 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED最大功率耗散：74 W
最大重复峰值反向电压：600 V最大反向电流：10 µA
最大反向恢复时间：0.06 µs子类别：Rectifier Diodes
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-HFA30PA60C-N3 数据手册

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VS-HFA30PA60CPbF, VS-HFA30PA60C-N3  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 15 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Designed and qualified according to  
JEDEC-JESD47  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
TO-247AC  
Base  
BENEFITS  
• Reduced RFI and EMI  
common  
cathode  
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
DESCRIPTION  
1
3
VS-HFA30PA60C... is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and 15 A  
per leg continuous current, the VS-HFA30PA60C... is  
especially well suited for use as the companion diode for  
IGBTs and MOSFETs. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA30PA60C... is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
Anode  
1
Anode  
2
2
Common  
cathode  
PRODUCT SUMMARY  
Package  
TO-247AC  
2 x 15 A  
600 V  
IF(AV)  
VR  
VF at IF  
1.7 V  
trr typ.  
19 ns  
TJ max.  
Diode variation  
150 °C  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
15  
Maximum continuous forward current  
IF  
TC = 100 °C  
30  
A
Single pulse forward current  
IFSM  
IFRM  
150  
Maximum repetitive forward current  
60  
TC = 25 °C  
74  
29  
Maximum power dissipation  
PD  
W
TC = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Revision: 02-Jul-12  
Document Number: 94068  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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VS-HFA30PA60C-N3 替代型号

型号 品牌 替代类型 描述 数据表
MUR3060WTG ONSEMI

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