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VS-HFA30TA60CHN3

更新时间： 2024-10-30 21:13:23
品牌 Logo 应用领域
威世 - VISHAY 局域网功效光电二极管
页数 文件大小 规格书
6页 158K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

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VS-HFA30TA60CHN3 技术参数

生命周期：Active包装说明：R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.68
其他特性：LOW NOISE, PD-CASE应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：74 W参考标准：AEC-Q101
最大重复峰值反向电压：600 V最大反向电流：10 µA
最大反向恢复时间：0.06 µs表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VS-HFA30TA60CHN3 数据手册

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VS-HFA30TA60CHN3  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 15 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• AEC-Q101 qualified, meets JESD 201 class 1A  
whisker test  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
TO-220AB  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
Base  
common  
cathode  
2
• Reduced parts count  
DESCRIPTION  
2
Common  
VS-HFA30TA60CHN3 is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and 15 A  
per leg continuous current, the VS-HFA30TA60CHN3 is  
especially well suited for use as the companion diode for  
IGBTs and MOSFETs. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA30TA60CHN3 is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
cathode  
Anode  
Anode  
1
3
PRODUCT SUMMARY  
Package  
TO-220AB  
IF(AV)  
2 x 15 A  
600 V  
VR  
VF at IF  
1.2 V  
trr typ.  
19 ns  
TJ max.  
Diode variation  
150 °C  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
15  
Maximum continuous forward current  
IF  
TC = 100 °C  
30  
A
Single pulse forward current  
IFSM  
IFRM  
150  
Maximum repetitive forward current  
60  
74  
TC = 25 °C  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
29  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 15-Jul-15  
Document Number: 94511  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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