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VS-HFA60EA120P PDF预览

VS-HFA60EA120P

更新时间: 2024-10-30 20:08:03
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网光电二极管
页数 文件大小 规格书
7页 782K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 1200V V(RRM), Silicon,

VS-HFA60EA120P 技术参数

生命周期:Obsolete包装说明:R-PUFM-X4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.47
其他特性:PD-CASE, UL RECOGNIZED应用:ULTRA FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):3.8 VJESD-30 代码:R-PUFM-X4
最大非重复峰值正向电流:350 A元件数量:2
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大功率耗散:312 W最大重复峰值反向电压:1200 V
最大反向电流:75 µA最大反向恢复时间:0.145 µs
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPERBase Number Matches:1

VS-HFA60EA120P 数据手册

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VS-HFA60EA120P  
Vishay Semiconductors  
www.vishay.com  
HEXFRED®  
Ultrafast Soft Recovery Diode, 60 A  
FEATURES  
• Fast recovery time characteristic  
• Electrically isolated base plate  
• Antiparallel diodes  
• Large creepage distance between terminal  
• Simplified mechanical designs, rapid assembly  
• UL approved file E78996  
SOT-227  
• Designed and qualified for industrial level  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
DESCRIPTION/APPLICATIONS  
VR  
1200 V  
2.2 V  
This SOT-227 modules with HEXFRED® rectifier are in  
antiparallel configuration. The antiparallel configuration is  
used for simple series rectifier and high voltage application.  
The semiconductor in the SOT-227 package is isolated from  
the copper base plate, allowing for common heatsinks and  
compact assemblies to be built.   
VF (typical)  
trr (typical)  
145 ns  
I
F(DC) at TC  
Package  
30 A at 120 °C  
SOT-227  
Circuit configuration  
Two separate diodes  
These modules are intended for general applications such  
as HV power supplies, electronic welders, motor control and  
inverters.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
1200  
30  
UNITS  
Cathode to anode voltage  
V
Continuous forward current  
Single pulse forward current  
Maximum repetitive forward current  
IF  
TC = 120 °C  
IFSM  
IFRM  
TJ = 25 °C  
350  
A
Rated VR, square wave, 20 kHz, TC = 60 °C  
TC = 25 °C  
130  
312  
Maximum power dissipation  
RMS isolation voltage  
PD  
W
T
C = 100 °C  
125  
VISOL  
Any terminal to case, t = 1 minute  
2500  
V
Operating junction and storage  
temperature range  
TJ, TStg  
- 55 to 150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Cathode to anode   
breakdown voltage  
VBR  
IR = 100 μA  
1200  
-
-
IF = 30 A  
-
-
-
-
-
2.2  
2.7  
2.1  
2.0  
2.7  
3.0  
3.8  
-
V
Forward voltage  
VFM  
IF = 60 A  
IF = 60 A, TJ = 150 °C  
VR = VR rated  
75  
10  
μA  
Reverse leakage current  
IRM  
TJ = 150 °C, VR = VR rated  
mA  
Revision: 22-Jul-13  
Document Number: 94610  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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