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VS-HFAA04SD60STRRP

更新时间： 2024-10-30 19:53:15
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 133K
描述
DIODE 4 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, DPAK-3, Rectifier Diode

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VS-HFAA04SD60STRRP 技术参数

生命周期：Active零件包装代码：TO-252AA
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.34
其他特性：FREE WHEELING DIODE应用：ULTRA FAST SOFT RECOVERY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
最大非重复峰值正向电流：25 A元件数量：1
相数：1端子数量：2
最大输出电流：4 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.042 µs表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
Base Number Matches：1

VS-HFAA04SD60STRRP 数据手册

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VS-HFA04SD60SPbF  
Vishay Semiconductors  
www.vishay.com  
HEXFRED® Ultrafast Soft Recovery Diode, 4 A  
FEATURES  
2, 4  
• Ultrafast recovery time  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Guaranteed avalanche  
1
N/C  
3
Anode  
• Specified at operating temperature  
• Compliant to RoHS Directive 2002/95/EC  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
D-PAK (TO-252AA)  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
4 A  
IF(AV)  
• Reduced parts count  
VR  
600 V  
VF at IF  
1.8 V  
DESCRIPTION/APPLICATIONS  
These diodes are optimized to reduce losses and EMI/RFI  
in high frequency power conditioning systems. The softness  
of the recovery eliminates the need for a snubber in  
most applications. These devices are ideally suited for  
freewheeling, flyback, power converters, motor drives, and  
other applications where high speed and reduced switching  
losses are design requirements.  
t
rr typ.  
17 ns  
TJ max.  
150 °C  
Diode variation  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
TC = 100 °C  
4
IFSM  
25  
16  
A
Repetitive peak forward current  
Maximum power dissipation  
IFRM  
TC = 116 °C  
TC = 100 °C  
PD  
10  
W
Operating junction and storage temperatures  
TJ, TStg  
- 55 to 150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
600  
-
-
IF = 4 A  
IF = 8 A  
-
-
-
-
-
-
-
1.5  
1.8  
1.4  
0.17  
44  
1.8  
2.2  
1.7  
3.0  
300  
8
V
Forward voltage  
See fig. 1  
VF  
IF = 4 A, TJ = 125 °C  
VR = VR rated  
Maximum reverse  
leakage current  
IR  
μA  
TJ = 125 °C, VR = 0.8 x VR rated  
VR = 200 V  
Junction capacitance  
Series inductance  
CT  
LS  
4
pF  
Measured lead to lead 5 mm from package body  
8.0  
-
nH  
Revision: 14-Jun-11  
Document Number: 94034  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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