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VS-HFA32PA120C-N3 PDF预览

VS-HFA32PA120C-N3

更新时间： 2024-02-15 19:24:44
品牌 Logo 应用领域
威世 - VISHAY 局域网功效光电二极管
页数 文件大小 规格书
7页 147K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

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VS-HFA32PA120C-N3 技术参数

生命周期：Active包装说明：R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.56
其他特性：LOW NOISE, PD-CASE应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：3.93 VJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3最大非重复峰值正向电流：190 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：16 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：151 W最大重复峰值反向电压：1200 V
最大反向电流：20 µA最大反向恢复时间：0.135 µs
子类别：Rectifier Diodes表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VS-HFA32PA120C-N3 数据手册

 浏览型号VS-HFA32PA120C-N3的Datasheet PDF文件第2页浏览型号VS-HFA32PA120C-N3的Datasheet PDF文件第3页浏览型号VS-HFA32PA120C-N3的Datasheet PDF文件第4页浏览型号VS-HFA32PA120C-N3的Datasheet PDF文件第5页浏览型号VS-HFA32PA120C-N3的Datasheet PDF文件第6页浏览型号VS-HFA32PA120C-N3的Datasheet PDF文件第7页 
VS-HFA32PA120CPbF, VS-HFA32PA120C-N3  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 16 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Designed and qualified according to  
JEDEC®-JESD47  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
TO-247AC  
Available  
Base  
common  
cathode  
BENEFITS  
• Reduced RFI and EMI  
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
DESCRIPTION  
1
Anode  
3
VS-HFA32PA120C... is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 1200 V and 16 A per leg continuous  
current, the VS-HFA32PA120C... is especially well suited for  
use as the companion diode for IGBTs and MOSFETs. In  
addition to ultrafast recovery time, the HEXFRED® product  
line features extremely low values of peak recovery current  
(IRRM) and does not exhibit any tendency to “snap-off”  
during the tb portion of recovery. The HEXFRED features  
combine to offer designers a rectifier with lower noise and  
significantly lower switching losses in both the diode and the  
switching transistor. These HEXFRED advantages can help  
to significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA32PA120C... is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
Anode  
2
2
1
Common  
cathode  
PRODUCT SUMMARY  
Package  
TO-247AC  
2 x 16 A  
1200 V  
2.3 V  
IF(AV)  
VR  
VF at IF  
t
rr typ.  
30 ns  
TJ max.  
150 °C  
Diode variation  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
1200  
V
per leg  
per device  
16  
Maximum continuous forward current  
IF  
TC = 100 °C  
32  
190  
A
Single pulse forward current  
IFSM  
IFRM  
Maximum repetitive forward current  
64  
TC = 25 °C  
151  
Maximum power dissipation  
PD  
°C  
W
T
C = 100 °C  
60  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
Revision: 14-Jul-15  
Document Number: 94073  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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