Datasheet > VS-HFA25TB60PBF

VS-HFA25TB60PBF

更新时间： 2024-02-27 00:37:23

品牌	Logo	应用领域
INTERFET		二极管功效局域网软恢复二极管
页数	文件大小	规格书
6页	189K
描述
Ultrafast, Soft Recovery Diode

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技术参数
数据手册

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VS-HFA25TB60PBF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-263
包装说明：	R-PSSO-G2	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.34
其他特性：	LOW NOISE	应用：	EFFICIENCY
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值正向电流：	225 A
元件数量：	1	相数：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-55 °C	最大输出电流：	25 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	最大反向恢复时间：	0.075 µs
表面贴装：	YES	端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

VS-HFA25TB60PBF 数据手册

Bulletin PD -2.339 rev. A 11/00

HFA25TB60

HEXFRED

Ultrafast, Soft Recovery Diode

BASE

CATHODE

V_R= 600V

V_F(typ.)* = 1.3V

I_F(AV)= 25A

Features

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

Q_rr(typ.)= 112nC

I_RRM= 10A

t_rr(typ.) = 23ns

• Very Low Q_rr

• Specified at Operating Conditions

Benefits

CATHODE

ANODE

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

di_(rec)M/dt (typ.) = 250A/µs

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA25TB60 is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is

especially well suited for use as the companion diode for IGBTs and MOSFETs.

In addition to ultra fast recovery time, the HEXFRED product line features

extremely low values of peak recovery current (I_RRM) and does not exhibit any

TO-220AC

tendency to "snap-off" during the t_bportion of recovery. The HEXFRED features

combine to offer designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching transistor. These HEXFRED

advantages can help to significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in

power supplies and power conversion systems (such as inverters), motor

drives, and many other similar applications where high speed, high efficiency

is needed.

Absolute Maximum Ratings

Parameter

Max

Units

V_R

Cathode-to-Anode Voltage

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

Operating Junction and

600

I_F@ T_C= 100°C

I_FSM

I_FRM

225

100

125

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

T_STG

-55 to +150

Storage Temperature Range

* 125°C

12 3 4 5 6

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VS-HFA25TB60SPBF	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 25A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-	获取价格
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