Datasheet > VS-HFA16TB120S-M3

VS-HFA16TB120S-M3

更新时间： 2023-12-06 20:03:29

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	167K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 16 A

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VS-HFA16TB120S-M3

www.vishay.com

Vishay Semiconductors

HEXFRED^®

Ultrafast Soft Recovery Diode, 16 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263AB)

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

N/C

• Reduced parts count

Anode

DESCRIPTION

VS-HFA16TB120S is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 16 A continuous current,

the VS-HFA16TB120S is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the t_b

portion of recovery. The HEXFRED features combine to offer

designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA16TB120S is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRIMARY CHARACTERISTICS

I_F(AV)

16 A

1200 V

2.3 V

V_R

V_Fat I_F

t_rr(typ.)

T_Jmax.

30 ns

150 °C

Package

D²PAK (TO-263AB)

Circuit configuration

Single

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

MAX.

1200

UNITS

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

190

Maximum repetitive forward current

T_C= 25 °C

151

Maximum power dissipation

P_D

T_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

-55 to +150

°C

Revision:16-Dec-2021

Document Number: 96312

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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