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VS-HFA16TB120STRRPBF

更新时间： 2024-02-27 08:21:14
品牌 Logo 应用领域
威世 - VISHAY 功效光电二极管
页数 文件大小 规格书
8页 151K
描述
Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2

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VS-HFA16TB120STRRPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：R-PSSO-G2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.68
其他特性：LOW NOISE, PD-CASE应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：3.93 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：190 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：16 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
最大功率耗散：151 W最大重复峰值反向电压：1200 V
最大反向电流：20 µA最大反向恢复时间：0.135 µs
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：10Base Number Matches：1

VS-HFA16TB120STRRPBF 数据手册

 浏览型号VS-HFA16TB120STRRPBF的Datasheet PDF文件第2页浏览型号VS-HFA16TB120STRRPBF的Datasheet PDF文件第3页浏览型号VS-HFA16TB120STRRPBF的Datasheet PDF文件第4页浏览型号VS-HFA16TB120STRRPBF的Datasheet PDF文件第5页浏览型号VS-HFA16TB120STRRPBF的Datasheet PDF文件第6页浏览型号VS-HFA16TB120STRRPBF的Datasheet PDF文件第7页 
VS-HFA16TB120SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 16 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
2
• Very low Qrr  
• Specified at operating conditions  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Halogen-free according to IEC 61249-2-21  
definition  
1
N/C  
3
D2PAK  
Anode  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
PRODUCT SUMMARY  
DESCRIPTION  
VS-HFA16TB120SPbF is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 1200 V and 16 A continuous current,  
the VS-HFA16TB120SPbF is especially well suited for use  
as the companion diode for IGBTs and MOSFETs. In  
addition to ultrafast recovery time, the HEXFRED® product  
line features extremely low values of peak recovery current  
(IRRM) and does not exhibit any tendency to “snap-off”  
VR  
VF at 16 A at 25 °C  
IF(AV)  
1200 V  
3 V  
16 A  
trr (typical)  
30 ns  
150 °C  
260 nC  
76 A/μs  
5.8 A  
TJ (maximum)  
Qrr (typical)  
dI(rec)M/dt (typical) at 125 °C  
IRRM (typical)  
during the  
tb portion of recovery. The HEXFRED  
features combine to offer designers a rectifier with lower  
noise and significantly lower switching losses in both the  
diode and the switching transistor. These HEXFRED  
advantages can help to significantly reduce snubbing,  
component count and heatsink sizes. The HEXFRED  
VS-HFA16TB120SPbF is ideally suited for applications in  
power supplies and power conversion systems (such as  
inverters), motor drives, and many other similar applications  
where high speed, high efficiency is needed.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
16  
IFSM  
IFRM  
190  
A
Maximum repetitive forward current  
64  
151  
TC = 25 °C  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
60  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 94594  
Revision: 24-Feb-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
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