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VS-HFA210NJ60CPbF

更新时间： 2024-09-27 14:54:59
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威世 - VISHAY /
页数 文件大小 规格书
7页 165K
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HEXFRED? Ultrafast Soft Recovery Diode, 210 A

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VS-HFA210NJ60CPbF  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 210 A  
FEATURES  
• Very low Qrr and trr  
Lug  
terminal  
anode 1  
Lug  
terminal  
anode 2  
• UL approved file E222165  
• Designed and qualified for industrial level  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
BENEFITS  
• Reduced RFI and EMI  
Base common  
cathode  
TO-244  
• Reduced snubbing  
DESCRIPTION / APPLICATIONS  
HEXFRED® diodes are optimized to reduce losses and  
EMI/RFI in high frequency power conditioning systems. An  
extensive characterization of the recovery behavior for  
different values of current, temperature and dIF/dt simplifies  
the calculations of losses in the operating conditions.  
The softness of the recovery eliminates the need for a  
snubber in most applications. These devices are ideally  
suited for power converters, motors drives and other  
applications where switching losses are significant portion  
of the total losses.  
PRIMARY CHARACTERISTICS  
IF(AV)  
210 A  
600 V  
VR  
I
F(DC) at TC  
Package  
120 A at 100 °C  
TO-244  
Circuit configuration  
Two diodes common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
235  
120  
600  
2.2  
UNITS  
Cathode to anode voltage  
VR  
V
TC = 25 °C  
C = 100 °C  
Continuous forward current  
IF  
T
A
Single pulse forward current  
IFSM  
EAS  
Limited by junction temperature  
L = 100 μH, duty cycle limited by maximum TJ  
TC = 25 °C  
Non-repetitive avalanche energy  
mJ  
W
463  
185  
Maximum power dissipation  
PD  
TC = 100 °C  
Operating junction and storage  
temperature range  
TJ, TStg  
-55 to +150  
°C  
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Cathode to anode   
breakdown voltage  
VBR  
IR = 100 μA  
600  
-
-
IF = 105 A  
IF = 210 A  
-
-
-
-
-
-
1.38  
1.6  
1.3  
1.8  
200  
6.0  
1.9  
2.25  
1.56  
6.0  
300  
-
V
Maximum forward voltage  
VFM  
See fig. 1  
IF = 105 A, TJ = 125 °C  
TJ = 125 °C, VR = 480 V  
VR = 200 V  
Maximum reverse leakage current  
Junction capacitance  
IRM  
CT  
LS  
See fig. 2  
See fig. 3  
mA  
pF  
Series inductance  
From top of terminal hole to mounting plane  
nH  
Revision: 11-Jan-18  
Document Number: 94062  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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