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VS-HFA180NH40PBF

更新时间： 2024-11-05 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网光电二极管
页数 文件大小 规格书
7页 163K
描述
Rectifier Diode, 1 Phase, 1 Element, 395A, 400V V(RRM), Silicon, ROHS COMPLIANT, D-67, HALF PAK-1

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VS-HFA180NH40PBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, D-67, HALF PAK-1Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：18 weeks风险等级：5.76
其他特性：PD-CASE, UL RECOGNIZED应用：ULTRA FAST SOFT RECOVERY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.8 VJESD-30 代码：R-PUFM-X1
最大非重复峰值正向电流：1200 A元件数量：1
相数：1端子数量：1
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：395 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED最大功率耗散：657 W
最大重复峰值反向电压：400 V最大反向电流：4000 µA
最大反向恢复时间：0.14 µs表面贴装：NO
端子形式：UNSPECIFIED端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VS-HFA180NH40PBF 数据手册

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VS-HFA180NH40PbF  
Vishay Semiconductors  
www.vishay.com  
HEXFRED®  
Ultrafast Soft Recovery Diode, 180 A  
FEATURES  
• Very low Qrr and trr  
Lug terminal  
anode  
• Designed and qualified for industrial level  
• UL approved file E222165  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Base  
cathode  
BENEFITS  
HALF-PAK (D-67)  
• Reduced RFI and EMI  
• Reduced snubbing  
DESCRIPTION  
PRIMARY CHARACTERISTICS  
HEXFRED® diodes are optimized to reduce losses and  
EMI/RFI in high frequency power conditioning systems. An  
extensive characterization of the recovery behavior for  
different values of current, temperature and dIF/dt simplifies  
the calculations of losses in the operating conditions. The  
softness of the recovery eliminates the need for a snubber in  
most applications. These devices are ideally suited for  
power converters, motors drives and other applications  
where switching losses are significant portion of the total  
losses.  
IF(AV)  
180 A  
400 V  
VR  
I
F(DC) at TC  
Package  
200 A at 100 °C  
HALF-PAK (D-67)  
Single diode  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
400  
395  
200  
1200  
1.4  
UNITS  
Cathode to anode voltage  
VR  
V
TC = 25 °C  
C = 100 °C  
Continuous forward current  
IF  
T
A
Single pulse forward current  
IFSM  
EAS  
Limited by junction temperature  
L = 100 μH, duty cycle limited by maximum TJ  
TC = 25 °C  
Non-repetitive avalanche energy  
mJ  
W
657  
263  
Maximum power dissipation  
PD  
TC = 100 °C  
Operating junction and storage  
temperature range  
TJ, TStg  
-55 to +150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Cathode to anode  
breakdown voltage  
VBR  
IR = 100 μA  
400  
-
-
IF = 180 A  
IF = 360 A  
-
-
-
1.08  
1.22  
0.99  
1.46  
1.8  
V
Maximum forward voltage  
VFM  
See fig. 1  
IF = 180 A, TJ = 125 °C  
TJ = 125 °C, VR = 400 V  
VR = 200 V  
1.34  
Maximum reverse   
leakage current  
IRM  
See fig. 2  
See fig. 3  
-
-
4
mA  
Junction capacitance  
Series inductance  
CT  
LS  
-
-
370  
6.0  
500  
-
pF  
nH  
From top of terminal hole to mounting plane  
Revision: 11-Jan-18  
Document Number: 94061  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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