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VS-HFA16PB120-N3

更新时间： 2024-12-01 19:48:47
品牌 Logo 应用领域
威世 - VISHAY 局域网功效光电二极管
页数 文件大小 规格书
7页 160K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

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VS-HFA16PB120-N3 技术参数

生命周期：Active包装说明：R-PSFM-T2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.69
其他特性：LOW NOISE, PD-CASE应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：3.93 VJESD-30 代码：R-PSFM-T2
最大非重复峰值正向电流：190 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：16 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED最大功率耗散：151 W
最大重复峰值反向电压：1200 V最大反向电流：20 µA
最大反向恢复时间：0.135 µs表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VS-HFA16PB120-N3 数据手册

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VS-HFA16PB120PbF, VS-HFA16PB120-N3  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 16 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Designed and qualified according to  
JEDEC®-JESD47  
2
3
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
TO-247AC modified  
Available  
BENEFITS  
Cathode  
to base  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
2
• Reduced snubbing  
• Reduced parts count  
3
1
Anode  
Cathode  
DESCRIPTION  
VS-HFA16PB120... is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 1200 V and 16 A continuous current,  
the VS-HFA16PB120... is especially well suited for use as  
the companion diode for IGBTs and MOSFETs. In addition  
to ultrafast recovery time, the HEXFRED® product line  
features extremely low values of peak recovery current  
(IRRM) and does not exhibit any tendency to “snap-off”  
during the tb portion of recovery. The HEXFRED features  
combine to offer designers a rectifier with lower noise and  
significantly lower switching losses in both the diode and the  
switching transistor. These HEXFRED advantages can help  
to significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA16PB120... is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
Package  
TO-247AC modified (2 pins)  
IF(AV)  
16 A  
1200 V  
2.3 V  
VR  
VF at IF  
t
rr typ.  
30 ns  
TJ max.  
150 °C  
Single die  
Diode variation  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
16  
190  
IFSM  
IFRM  
A
Maximum repetitive forward current  
64  
TC = 25 °C  
151  
Maximum power dissipation  
PD  
W
TC = 100 °C  
60  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 05-Apr-16  
Document Number: 94057  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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