Datasheet > VS-HFA16TA60C-M3

VS-HFA16TA60C-M3

更新时间： 2023-12-06 20:13:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	210K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 2 x 8 A

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VS-HFA16TA60C-M3 数据手册

VS-HFA16TA60C-M3

Vishay Semiconductors

www.vishay.com

HEXFRED^®

Ultrafast Soft Recovery Diode, 2 x 8 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• Designed and qualified according to

JEDEC^®-JESD 47

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

TO-220AB 3L

Base

common

cathode

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

Common

cathode

Anode

DESCRIPTION

VS-HFA16TA60C... is a state of the art center tap ultrafast

recovery diode. Employing the latest in epitaxial

construction and advanced processing techniques it

features a superb combination of characteristics which

result in performance which is unsurpassed by any rectifier

previously available. With basic ratings of 600 V and 8 A per

leg continuous current, the VS-HFA16TA60C... is especially

well suited for use as the companion diode for IGBTs and

MOSFETs. In addition to ultrafast recovery time, the

HEXFRED^®product line features extremely low values of

peak recovery current (I_RRM) and does not exhibit any

tendency to “snap-off” during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier

with lower noise and significantly lower switching losses in

both the diode and the switching transistor. These

HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The

HEXFRED VS-HFA16TA60C... is ideally suited for

applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other

similar applications where high speed, high efficiency is

needed.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 8 A

600 V

V_R

V_Fat I_F

1.4 V

_rrtyp.

18 ns

T_Jmax.

Package

150 °C

TO-220AB 3L

Common cathode

Circuit configuration

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

V_R

600

per leg

per device

Maximum continuous forward current

I_F

T_C= 100 °C

Single pulse forward current

I_FSM

I_FRM

Maximum repetitive forward current

T_C= 25 °C

Maximum power dissipation

P_D

T_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

-55 to +150

°C

Revision: 16-Dec-2021

Document Number: 96203

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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