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VS-HFA16TA60CSTRRP

更新时间： 2024-12-01 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
8页 164K
描述
Rectifier Diode, 1 Phase, 2 Element, 8A, 600V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2

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VS-HFA16TA60CSTRRP 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：R-PSSO-G2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.72其他特性：LOW NOISE
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：2.1 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
最大非重复峰值正向电流：60 A元件数量：2
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED最大功率耗散：36 W
参考标准：AEC-Q101最大重复峰值反向电压：600 V
最大反向电流：5 µA最大反向恢复时间：0.055 µs
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-HFA16TA60CSTRRP 数据手册

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VS-HFA16TA60CSPbF  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 8 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Specified at operating conditions  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• AEC-Q101 qualified  
2
3
1
• Material categorization:  
TO-263AB (D2PAK)  
for definitions of compliance please see  
www.vishay.com/doc?99912  
Base  
common  
cathode  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
2
1
3
Common  
cathode  
• Reduced parts count  
Anode  
Anode  
DESCRIPTION  
VS-HFA16TA60CS is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and 8 A per  
leg continuous current, the VS-HFA16TA60CS is especially  
well suited for use as the companion diode for IGBTs and  
MOSFETs. In addition to ultrafast recovery time, the  
HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA16TA60CS is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
2 x 8 A  
IF(AV)  
VR  
600 V  
VF at IF  
1.4 V  
trr typ.  
18 ns  
TJ max.  
Diode variation  
150 °C  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
8
Maximumcontinuousforwardcurrent  
IF  
TC = 100 °C  
16  
A
Single pulse forward current  
IFSM  
IFRM  
60  
Maximum repetitive forward current  
24  
36  
TC = 25 °C  
Maximum power dissipation  
PD  
W
TC = 100 °C  
14  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 09-May-16  
Document Number: 94059  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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