Datasheet > VS-HFA16TB120-M3

VS-HFA16TB120-M3

更新时间： 2023-12-06 20:08:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	168K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 16 A

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VS-HFA16TB120-M3 数据手册

VS-HFA16TB120-M3

Vishay Semiconductors

www.vishay.com

HEXFRED^®

Ultrafast Soft Recovery Diode, 16 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• Designed and qualified according to

JEDEC^®-JESD 47

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TO-220AC 2L

BENEFITS

Base

cathode

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

Cathode

Anode

DESCRIPTION

VS-HFA16TB120... is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 16 A continuous current,

the VS-HFA16TB120... is especially well suited for use as

the companion diode for IGBTs and MOSFETs. In addition

to ultrafast recovery time, the HEXFRED^®product line

features extremely low values of peak recovery current

(I_RRM) and does not exhibit any tendency to “snap-off”

during the t_bportion of recovery. The HEXFRED features

combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the

switching transistor. These HEXFRED advantages can help

to significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA16TB120... is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRIMARY CHARACTERISTICS

I_F(AV)

16 A

1200 V

2.3 V

V_R

V_Fat I_F

_rrtyp.

30 ns

T_Jmax.

Package

150 °C

TO-220AC 2L

Single

Circuit configuration

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

1200

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

190

I_FSM

I_FRM

Maximum repetitive forward current

T_C= 25 °C

151

Maximum power dissipation

P_D

T_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

-55 to +150

°C

Revision: 16-Dec-2021

Document Number: 96192

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-HFA16TB120-M3相关器件

型号	品牌	描述	获取价格	数据表
VS-HFA16TB120PBF	VISHAY	DIODE 16 A, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifi	获取价格
VS-HFA16TB120SHM3	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, TO-263AB, D2PAK-3/2	获取价格
VS-HFA16TB120SLHM3	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, TO-263AB, D2PAK-3/2	获取价格
VS-HFA16TB120S-M3	VISHAY	HEXFRED? Ultrafast Soft Recovery Diode, 16 A	获取价格
VS-HFA16TB120SPBF	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 16A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-	获取价格
VS-HFA16TB120SRHM3	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, TO-263AB, D2PAK-3/2	获取价格

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