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VS-HFA15TB60STRLP

更新时间： 2024-01-23 00:12:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 243K
描述
Ultrafast and ultrasoft recovery

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VS-HFA15TB60STRLP 数据手册

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VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®,  
Ultrafast Soft Recovery Diode, 15 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Designed and qualified for industrial level  
• AEC-Q101 qualified  
TO-263AB (D2PAK)  
TO-262AA  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
Base  
cathode  
2
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
1
N/C  
3
3
1
N/C  
Anode  
Anode  
VS-HFA15 TB60SPbF  
VS-HFA15 TB60-1PbF  
• Reduced parts count  
DESCRIPTION  
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of  
the art ultrafast recovery diode. Employing the latest in  
epitaxial construction and advanced processing techniques  
it features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
15 A  
600 V  
15  
A
continuous current, the VS-HFA15TB60SPbF,  
VS-HFA15TB60-1PbF is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA15TB60SPbF,  
VS-HFA15TB60-1PbF is ideally suited for applications in  
power supplies and power conversion systems (such as  
inverters), motor drives, and many other similar applications  
where high speed, high efficiency is needed.  
VR  
VF at IF  
1.2 V  
trr (typ.)  
TJ max.  
Diode variation  
23 ns  
150 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
15  
IFSM  
IFRM  
150  
A
Maximum repetitive forward current  
60  
74  
TC = 25 °C  
Maximum power dissipation  
PD  
W
TC = 100 °C  
29  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 29-Feb-16  
Document Number: 94054  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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